Comparison between BJT and MOSFET
| Sr# | Bi-Polar Junction Transistor (BJT) | Metal Oxide Field Effect Transistor (MOSFET) |
| 1 | It is a Bipolar Device | It is the majority carrier Device |
| 2 | Current control Device | Voltage control Device. |
| 3 | Output is controlled by controlling the base current | Output is controlled by controlling gate voltage |
| 4 | Negative temperature coefficient | Positive temperature coefficient |
| 5 | So, paralleling BJT is difficult. | So, paralleling this device is easy. |
| 6 | The dive circuit is complex. It should provide | The dive circuit is simple. It should provide |
| 7 | constant current (Base current) | constant voltage (gate voltage) |
| 8 | Losses are low. | Losses are higher than BJTs. |
| 9 | So used in high-power applications. | Used in low-power applications. |
| 10 | BJTs have high voltage and current ratings. | They have less voltage and current ratings. |
| 11 | The switching frequency is lower than MOSFET. | The switching frequency is high. |
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